- 专利标题： Semiconductor device and method for manufacturing the same
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申请号： US11384244申请日： 2006-03-21
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公开(公告)号： US20060175679A1公开(公告)日： 2006-08-10
- 发明人: Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人： Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-059948 20010305
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
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