发明申请
US20060180840A1 Switched capacitor circuit and semiconductor integrated circuit thereof
审中-公开
开关电容电路及其半导体集成电路
- 专利标题： Switched capacitor circuit and semiconductor integrated circuit thereof
- 专利标题（中）： 开关电容电路及其半导体集成电路
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申请号： US10560397申请日： 2004-06-11
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公开(公告)号： US20060180840A1公开(公告)日： 2006-08-17
- 发明人: Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
- 申请人： Takefumi Nishimuta , Hiroshi Miyagi , Tadahiro Ohmi , Shigetoshi Sugawa , Akinobu Teramoto
- 优先权： JP2003-170103 20030613
- 国际申请： PCT/JP04/08220 WO 20040611
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L27/108 ; H01L29/76 ; H01L31/119
摘要：
A rectangular parallelepiped projecting portion (21) having a height of HB and a width of WB is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion (21), thereby generating a MOS transistor. By connecting in parallel a p-channel MOS transistor and an n-channel MOS transistor produced as described above, a switch of a switched capacitor circuit is configured, thereby reducing a leak current and a DC offset of the switched capacitor circuit.
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