发明申请
- 专利标题： STRUCTURE AND METHOD FOR INTEGRATING MIM CAPACITOR IN BEOL WIRING LEVELS
- 专利标题（中）： 将电容器集成在水平线上的结构和方法
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申请号： US10906521申请日： 2005-02-23
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公开(公告)号： US20060189069A1公开(公告)日： 2006-08-24
- 发明人: Douglas Coolbaugh , Vidhya Ramachandran
- 申请人： Douglas Coolbaugh , Vidhya Ramachandran
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L29/94
摘要：
A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level, forming a bottom electrode of the capacitor on the isolating layer, and forming an interlevel dielectric material on the isolating layer and the bottom electrode. A capacitor dielectric is formed on the bottom electrode and a top electrode of the capacitor is formed on the capacitor dielectric, wherein the top electrode is formed concurrently with an upper wiring level, the upper level being the next successive wiring level with respect to the lower wiring level.
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