发明申请
US20060189133A1 Reliable BEOL integration process with direct CMP of porous SiCOH dielectric
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可靠的BEOL集成工艺与多孔SiCOH电介质的直接CMP
- 专利标题： Reliable BEOL integration process with direct CMP of porous SiCOH dielectric
- 专利标题（中）： 可靠的BEOL集成工艺与多孔SiCOH电介质的直接CMP
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申请号： US11063152申请日： 2005-02-22
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公开(公告)号： US20060189133A1公开(公告)日： 2006-08-24
- 发明人: Christos Dimitrakopoulos , Stephen Gates , Vincent McGahay , Sanjay Mehta
- 申请人： Christos Dimitrakopoulos , Stephen Gates , Vincent McGahay , Sanjay Mehta
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44 ; H01L23/48
摘要：
The present invention relates to methods of improving the fabrication of interconnect structures of the single or dual damascene type, in which there is no problem of hard mask retention or of conductivity between the metal lines after fabrication. The methods of the present invention include at least steps of chemical mechanical polishing and UV exposure or chemical repair treatment which steps improve the reliability of the interconnect structure formed. The present invention also relates to an interconnect structure which include a porous ultra low k dielectric of the SiCOH type in which the surface layer thereof has been modified so as to form a gradient layer that has both a density gradient and a C content gradient.
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