- 专利标题： Adhesion improvement for low k dielectrics
-
申请号： US11405852申请日： 2006-04-18
-
公开(公告)号： US20060189162A1公开(公告)日： 2006-08-24
- 发明人: Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Jerry Sugiarto , Li-qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park
- 申请人： Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Jerry Sugiarto , Li-qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
公开/授权文献
- US07459404B2 Adhesion improvement for low k dielectrics 公开/授权日：2008-12-02
信息查询
IPC分类:
