公开(公告)号：US20050202685A1

公开(公告)日：2005-09-15

申请号：US10801190

申请日：2004-03-15

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Li-Qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park ,  Jerry Sugiarto

IPC分类号： C23C16/02 ,  C23C16/32 ,  C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US20060189162A1

公开(公告)日：2006-08-24

申请号：US11405852

申请日：2006-04-18

申请人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

发明人： Lihua Huang ,  Tzu-Fang Huang ,  Dian Sugiarto ,  Jerry Sugiarto ,  Li-qun Xia ,  Peter Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

公开(公告)号：US20050186339A1

公开(公告)日：2005-08-25

申请号：US10783316

申请日：2004-02-20

申请人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/02 ,  C23C16/42 ,  C23C16/52 ,  H01L21/768 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20090011148A1

公开(公告)日：2009-01-08

申请号：US12214393

申请日：2008-06-17

申请人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/22

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US07018941B2

公开(公告)日：2006-03-28

申请号：US10830203

申请日：2004-04-21

申请人： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

发明人： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

IPC分类号： H01L21/31 ,  H01L21/461

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

摘要翻译： 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：US20090286402A1

公开(公告)日：2009-11-19

申请号：US12257137

申请日：2008-10-23

申请人： Li-Qun Xia ,  Mihaela Balseanu ,  Meiyee Shek ,  Siyi Li ,  Zhenjiang Cui ,  Mehul B. Naik ,  Michael D. Armacost ,  William H. McClintock

发明人： Li-Qun Xia ,  Mihaela Balseanu ,  Meiyee Shek ,  Siyi Li ,  Zhenjiang Cui ,  Mehul B. Naik ,  Michael D. Armacost ,  William H. McClintock

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76816

摘要： A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.

摘要翻译： 提供了一种用于在基板中形成窄通孔的方法和装置。 通过常规光刻将图案凹槽蚀刻到基底中。 在衬底的表面上形成薄的共形层，包括图案凹槽的侧壁和底部。 共形层的厚度减小了图案凹槽的有效宽度。 通过各向异性蚀刻从图案凹槽的底部去除共形层以暴露下面的衬底。 然后使用覆盖图案凹槽的侧壁的保形层作为掩模蚀刻衬底。 然后使用湿蚀刻剂除去保形层。

公开(公告)号：US07229911B2

公开(公告)日：2007-06-12

申请号：US10929884

申请日：2004-08-30

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Albert Lee ,  Annamalai Lakshmanan ,  Li-Qun Xia ,  Zhenjiang Cui

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Albert Lee ,  Annamalai Lakshmanan ,  Li-Qun Xia ,  Zhenjiang Cui

IPC分类号： H01L21/4763

CPC分类号： H01L21/02211 ,  C23C16/325 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

摘要翻译： 提供了用于处理用于在导电材料和电介质层之间沉积粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括定位其上布置有导电材料的衬底，引入还原化合物或硅基化合物，将导电材料暴露于还原化合物或硅基化合物，以及沉积 没有破坏真空的碳化硅层。

公开(公告)号：US07259111B2

公开(公告)日：2007-08-21

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Carlos Rocha-Alvarez ,  Bok Hoen Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20060160376A1

公开(公告)日：2006-07-20

申请号：US11142124

申请日：2005-06-01

申请人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

发明人： Deenesh Padhi ,  Ganesh Balasubramanian ,  Annamalai Lakshmanan ,  Zhenjiang Cui ,  Juan Rocha-Alvarez ,  Bok Kim ,  Hichem M'Saad ,  Steven Reiter ,  Francimar Schmitt

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.

摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。

公开(公告)号：US20050239293A1

公开(公告)日：2005-10-27

申请号：US10830203

申请日：2004-04-21

申请人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

发明人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

摘要翻译： 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。