发明申请
- 专利标题： Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
- 专利标题（中）： 用于高密度存储器的具有三维取向的铁电和高介电常数集成电路电容器及其制造方法
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申请号： US11411767申请日： 2006-04-26
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公开(公告)号： US20060194348A1公开(公告)日： 2006-08-31
- 发明人: Carlos Araujo , Larry McMillan , Narayan Solayappan , Vikram Joshi
- 申请人： Carlos Araujo , Larry McMillan , Narayan Solayappan , Vikram Joshi
- 申请人地址： US CO Colorado Springs
- 专利权人： Symetrix Corporation
- 当前专利权人： Symetrix Corporation
- 当前专利权人地址： US CO Colorado Springs
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/94
摘要：
A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.
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