公开(公告)号：US20050072925A1

公开(公告)日：2005-04-07

申请号：US10960876

申请日：2004-10-06

申请人： Zheng Chen ,  Carlos Paz de Araujo ,  Jolanta Celinska ,  Larry McMillan

发明人： Zheng Chen ,  Carlos Paz de Araujo ,  Jolanta Celinska ,  Larry McMillan

IPC分类号： G01J5/34 ,  G01J5/02

CPC分类号： G01J5/34

摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.

摘要翻译： 高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。 电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。 红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。

公开(公告)号：US07564021B2

公开(公告)日：2009-07-21

申请号：US10546613

申请日：2004-02-20

申请人： Joseph V. Mantese ,  Norman W. Schubring ,  Adolph L. Micheli ,  Carlos Paz De Araujo ,  Larry McMillan ,  Jolanta Celinska

发明人： Joseph V. Mantese ,  Norman W. Schubring ,  Adolph L. Micheli ,  Carlos Paz De Araujo ,  Larry McMillan ,  Jolanta Celinska

IPC分类号： G01J5/00 ,  H01J40/14

CPC分类号： G01J5/34

摘要： A pyroelectric sensor for determines a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry is employed to measure the charge from the scene element. The ferroelectric of the scene element is made of strontium bismuth tantalate, or derivative thereof, disposed directly between top and bottom electrodes. The polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.

摘要翻译： 一种热电传感器，用于通过在相同温度的特定时间范围内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用电荷积分电路来测量场景元素的电荷。 场景元件的铁电体由直接设置在顶部和底部电极之间的钽酸铋钽或其衍生物制成。 参考元件的极化，与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。

公开(公告)号：US5214300A

公开(公告)日：1993-05-25

申请号：US763371

申请日：1991-11-27

申请人： George A. Rohrer ,  Larry McMillan

发明人： George A. Rohrer ,  Larry McMillan

IPC分类号： C23C14/06 ,  H01G7/02

CPC分类号： H01G7/025 ,  C23C14/06 ,  H01G7/02

摘要： A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

摘要翻译： 公开了单片半导体集成电路 - 铁电体器件及其制造方法。 铁电体器件优选由设置在位于铁电层的相对表面上的电触点之间的稳定的铁电硝酸钾层组成。 铁电层的厚度小于110微米，优选在100埃至25,000埃的范围内。 制造整体式结构的方法是多级的，特别适用于在半导体集成电路上制造硝酸钾铁电存储器。

公开(公告)号：US4707897A

公开(公告)日：1987-11-24

申请号：US133338

申请日：1980-03-24

申请人： George A. Rohrer ,  Larry McMillan

发明人： George A. Rohrer ,  Larry McMillan

IPC分类号： H01G7/02 ,  H01G7/00

CPC分类号： H01G7/02 ,  Y10T29/435

摘要： A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

摘要翻译： 公开了单片半导体集成电路 - 铁电体器件及其制造方法。 电介质器件优选地由设置在位于铁电层的相对表面上的电触点之间的稳定的铁电硝酸钾层组成。 铁电层的厚度小于110微米，优选在100埃至5000埃的范围内。 制造整体式结构的方法是多级的，特别适用于在半导体集成电路上制造硝酸钾铁电存储器。

公开(公告)号：US20060194348A1

公开(公告)日：2006-08-31

申请号：US11411767

申请日：2006-04-26

申请人： Carlos Araujo ,  Larry McMillan ,  Narayan Solayappan ,  Vikram Joshi

发明人： Carlos Araujo ,  Larry McMillan ,  Narayan Solayappan ,  Vikram Joshi

IPC分类号： H01L21/00 ,  H01L29/94

CPC分类号： H01L27/11502 ,  C30B29/32 ,  C30B29/68 ,  G11C11/22 ,  H01L21/7687 ,  H01L23/642 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/57 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.

摘要翻译： 三维（“3-D”）存储电容器包括底电极，铁电薄膜和符合绝缘体层的3-D表面的顶电极。 电容面积大于电容器的水平占位面积。 优选地，电容器的占地面积小于0.2nm 2，并且相应的电容面积通常在0.4nm±2nm至1.0nm 2范围内 铁电薄膜优选具有不超过60nm的厚度。 包括底电极，铁电薄膜和顶电极的电容器层压体优选具有不超过200nm的厚度。 用于沉积厚度在30nm至90nm范围内的铁电薄膜的低热预算MOCVD方法包括在沉积顶电极之前的RTP处理和在沉积顶电极之后进行RTP处理并蚀刻铁电层 。

公开(公告)号：US20050094457A1

公开(公告)日：2005-05-05

申请号：US10425257

申请日：2003-04-28

申请人： Zheng Chen ,  Vikram Joshi ,  Narayan Solayappan ,  Carlos Paz de Araujo ,  Larry McMillan

发明人： Zheng Chen ,  Vikram Joshi ,  Narayan Solayappan ,  Carlos Paz de Araujo ,  Larry McMillan

IPC分类号： G11C11/22 ,  H01L27/06 ,  H01L27/115 ,  H01L29/78 ,  G11C7/00

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C11/223 ,  H01L27/0629 ,  H01L29/78391

摘要： A ferroelectric memory includes a group of memory cells, each cell having a ferroelectric memory element, a drive line on which a voltage for writing information to the group of memory cells is placed, and a bit line on which information to be read out of the group of memory cells is placed. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. A preamplifier is connected between the memory cells and the bit line. A set switch is connected between the drive line and the memory cells, and a reset switch is connected to the memory cells in parallel with the preamplifier. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.

摘要翻译： 铁电存储器包括一组存储器单元，每个单元具有铁电存储元件，其上放置用于向存储单元组写入信息的电压的驱动线以及从该存储单元读出的信息的位线 放置一组存储单元。 通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。 前置放大器连接在存储单元和位线之间。 一个开关连接在驱动线和存储单元之间，复位开关与前置放大器并联连接到存储单元。 在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

公开(公告)号：US20050073876A1

公开(公告)日：2005-04-07

申请号：US10961429

申请日：2004-10-07

申请人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

发明人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.

摘要翻译： 一种包括多个存储单元的非易失性SRAM存储器，每个存储单元包括一个SRAM存储单元部分和一个包括铁电元件的铁电存储单元部分，该铁电存储单元部分包括用于允许该铁电元件被隔离的开关系统 从所有其他记忆单元中的铁电元件。

公开(公告)号：US20070108385A1

公开(公告)日：2007-05-17

申请号：US10546613

申请日：2004-02-20

申请人： Joseph Mantese ,  Norman Schubring ,  Adolph Micheli ,  Carlos De Araujo ,  Larry McMillan ,  Jolanta Celinska

发明人： Joseph Mantese ,  Norman Schubring ,  Adolph Micheli ,  Carlos De Araujo ,  Larry McMillan ,  Jolanta Celinska

IPC分类号： G01J5/00

CPC分类号： G01J5/34

摘要： A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.

摘要翻译： 铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。 优选地，场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡，或其衍生物制成。 由于由外部AC信号产生的传感器的频率特性，该元件不需要通过难以制造的传统空气桥与硅衬底热隔离，而是优选地通过旋转隔离热隔离， 玻璃，SOG。 为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和，传感器优选地具有与场景元件电并联配置的参考元件。 当AC信号的电压为负时，输出电容器通过流过参考元件的电流而被放电，从而询问参考元件的偏振，该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。

公开(公告)号：US20050248978A1

公开(公告)日：2005-11-10

申请号：US11121145

申请日：2005-05-03

申请人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

发明人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C13/00 ,  H01L27/24

CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/24

摘要： A 1T1R resistive memory array configured as chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such a configuration is non-volatile and provides for each of the memory cells to be randomly accessed.

摘要翻译： 配置为存储器单元串的1T1R电阻存储器阵列，其中每个存储单元由与开关并联的电阻元件组成。 这样的配置是非易失性的，并且为每个存储器单元提供随机访问。

公开(公告)号：US20050180220A1

公开(公告)日：2005-08-18

申请号：US11030277

申请日：2005-01-06

申请人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

发明人： Zheng Chen ,  Carlos Paz de Araujo ,  Larry McMillan

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A device and method of reading a ferroelectric memory, including providing a ferroelectric memory including a ferroelectric memory cell, a charge integrator, and a bit line connecting the ferroelectric memory cell and the charge integrator. Pulses are applied to the ferroelectric memory cell, where each of the pulses are of a value lower than that which will destroy data stored in the memory cell. Output voltage values from the ferroelectric memory cell are accumulated by the charge integrator in response to each pulse. The output of the charge integrator may be read to determine whether the datum value stored in the memory cell is a logic high or low value. In one embodiment, the output of the charge integrator is read at a predetermined time after starting the pulses.

摘要翻译： 一种读取铁电存储器的装置和方法，包括提供包括铁电存储单元，电荷积分器和连接铁电存储单元和电荷积分器的位线的铁电存储器。 脉冲被施加到铁电存储器单元，其中每个脉冲的值低于将破坏存储在存储单元中的数据的值。 响应于每个脉冲，电荷积分器累积来自铁电存储单元的输出电压值。 可以读取电荷积分器的输出以确定存储在存储单元中的数据值是逻辑高还是低值。 在一个实施例中，在开始脉冲之后的预定时间读取电荷积分器的输出。