发明申请
- 专利标题： Substrate processing method
- 专利标题（中）： 基板加工方法
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申请号： US11431720申请日： 2006-05-11
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公开(公告)号： US20060205191A1公开(公告)日： 2006-09-14
- 发明人: Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
- 申请人： Yusaku Kashiwagi , Yasuhiro Oshima , Yoshihisa Kagawa , Gishi Chung
- 申请人地址： JP Minato-ku
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2003-381591 20031111; JP2003-417896 20031216
- 主分类号： B08B6/00
- IPC分类号： B08B6/00 ; H01L21/20
摘要：
A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.
公开/授权文献
- US07662728B2 Substrate processing method 公开/授权日：2010-02-16
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