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    Substrate processing method
    1.
    发明授权
    Substrate processing method 失效
    基板加工方法

    公开(公告)号：US07662728B2

    公开(公告)日：2010-02-16

    申请号：US11431720

    申请日：2006-05-11

    申请人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

    发明人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0234 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/3121

    摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

    摘要翻译： 形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜 的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

    Substrate processing method
    2.
    发明申请
    Substrate processing method 失效
    基板加工方法

    公开(公告)号：US20060205191A1

    公开(公告)日：2006-09-14

    申请号：US11431720

    申请日：2006-05-11

    申请人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

    发明人： Yusaku Kashiwagi ,  Yasuhiro Oshima ,  Yoshihisa Kagawa ,  Gishi Chung

    IPC分类号： B08B6/00 ,  H01L21/20

    CPC分类号： H01L21/0234 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/3121

    摘要： A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

    摘要翻译： 形成低K电介质膜的方法包括以下步骤：将载有低K电介质膜的衬底放置在载物台上，加热载体上的低K电介质膜，通过等离子体处理低K电介质膜 的含有氢气的处理气体，等离子体被激发，同时在低K电介质膜上提供处理气体，其中等离子体在将基板放置在载物台之后的90秒内被激发。

    Method for forming insulation film and apparatus for forming insulation film
    3.
    发明授权
    Method for forming insulation film and apparatus for forming insulation film 失效
    用于形成绝缘膜的方法和用于形成绝缘膜的装置

    公开(公告)号：US07601402B2

    公开(公告)日：2009-10-13

    申请号：US10703092

    申请日：2003-11-07

    申请人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

    发明人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

    IPC分类号： H05H1/24

    CPC分类号： C23C16/45523 ,  C23C16/401 ,  C23C16/56 ,  F27B17/0025 ,  H01J37/32082 ,  H01L21/67161 ,  H01L21/67207

    摘要： A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

    摘要翻译： 形成多孔绝缘膜的方法包括绝缘膜形成步骤和孔形成步骤。 在绝缘膜形成步骤中，有机硅氧烷基化合物和具有极性基团的有机化合物的等离子体处理形成具有硅氧烷结构的绝缘膜。 具有极性基团的有机化合物的分子包含在该硅氧烷结构内。 在孔形成步骤期间，激发气体除去具有极性基团的有机化合物的分子，以在绝缘膜中提供孔。 根据该方法，可以得到厚度方向均一地形成有规定厚度的绝缘膜和孔。

    EVAPORATOR
    7.
    发明申请
    EVAPORATOR 审中-公开
    蒸发器

    公开(公告)号：US20110023784A1

    公开(公告)日：2011-02-03

    申请号：US12933878

    申请日：2010-03-11

    申请人： Yusaku Kashiwagi ,  Kippei Sugita

    发明人： Yusaku Kashiwagi ,  Kippei Sugita

    IPC分类号： H01L21/469

    CPC分类号： B05D1/60

    摘要： An evaporator includes a heating part that heats and sublimates a solid source material to generate a source gas; a supplying part that is provided above the heating part and supplies the solid source material to the heating part; a gas introduction part to which a carrier gas that transports the source gas generated in the heating part is introduced; and a gas discharging part that discharges the generated source gas along with the carrier gas. The carrier gas introduced from the gas introduction part flows through the heating part.

    摘要翻译： 蒸发器包括加热部分，其加热和升华固体源材料以产生源气体; 供给部，其设置在所述加热部的上方，并将所述固体源材料供给到所述加热部; 导入在加热部中产生的源气体的载气的导入部， 以及与载气一起排出所产生的源气体的气体排出部。 从气体导入部导入的载气流过加热部。

    Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium
    8.
    发明授权
    Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium 有权
    半导体器件，半导体器件，半导体制造设备和存储介质的制造方法

    公开(公告)号：US08378464B2

    公开(公告)日：2013-02-19

    申请号：US12683073

    申请日：2010-01-06

    申请人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

    发明人： Yoshihiro Kato ,  Yusaku Kashiwagi ,  Takashi Matsumoto

    IPC分类号： H01L21/312 ,  H01L29/06

    CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76822 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.

    摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在基板上形成含有苯基和硅的薄膜，同时通过活化含有苯基的有机硅烷气体和硅和氮作为原始成分而获得等离子体，但是 不可避免的杂质，将基板暴露于等离子体，将基板的温度设定在200℃以下; 和（b）通过向衬底提供能量以便从薄膜中释放水分来获得低介电常数膜。 利用这种制造半导体器件的方法，可以获得含有有机物质的氧化硅类低介电常数膜，当通过蚀刻处理进行等离子体处理时，有机物质不被有机物释放而显着损坏 ，灰化处理和/或类似物。

    METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM FOR EXECUTING THE METHOD
    9.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM FOR EXECUTING THE METHOD 审中-公开
    用于制造半导体器件的方法和装置，以及用于执行方法的存储介质

    公开(公告)号：US20080184543A1

    公开(公告)日：2008-08-07

    申请号：US12024445

    申请日：2008-02-01

    申请人： Takuji Sako ,  Yusaku Kashiwagi ,  Hiroyuki Toshima ,  Kaoru Maekawa

    发明人： Takuji Sako ,  Yusaku Kashiwagi ,  Hiroyuki Toshima ,  Kaoru Maekawa

    IPC分类号： H01L21/768 ,  H01L21/67

    CPC分类号： H01L23/53238 ,  H01J37/32192 ,  H01L21/02074 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device manufacturing method capable of preventing an infliction of damage upon an interlayer insulating film and moisture adsorption thereto due to opening to atmosphere in a process of forming a CuSiN barrier by infiltrating Si into a surface of a copper-containing metal film and nitrifying a Si-infiltrated portion is disclosed.When a semiconductor device is manufactured through the processes of preparing a semiconductor substrate having a copper-containing metal film exposed on a surface thereof; purifying a surface of the copper-containing metal film by using radicals or by using a thermo-chemical method; infiltrating Si into the surface of the copper-containing metal film; and nitrifying a Si-infiltrated portion of the copper-containing metal film by radicals, the purification process, the Si introduction process and the nitrification process are successively performed without breaking a vacuum.

    摘要翻译： 一种半导体器件制造方法，其能够防止在通过将Si渗入到含铜金属膜的表面中而形成CuSiN势垒的过程中由于向大气开放而对层间绝缘膜造成的损害和水分吸附，并且硝化 公开了Si渗透部分。 当半导体器件通过制备在其表面上暴露的含铜金属膜的半导体衬底的工艺制造时; 通过使用自由基或使用热化学方法来净化含铜金属膜的表面; 将Si渗入含铜金属膜的表面; 并且通过自由基对含铜金属膜的Si渗透部分进行硝化，在不破坏真空的情况下连续进行净化处理，Si引入工序和硝化处理。