发明申请
- 专利标题： Stabilized photoresist structure for etching process
- 专利标题（中）： 用于蚀刻工艺的稳定光致抗蚀剂结构
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申请号： US11076087申请日： 2005-03-08
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公开(公告)号： US20060205220A1公开(公告)日： 2006-09-14
- 发明人: Eric Hudson , S.M. Sadjadi
- 申请人： Eric Hudson , S.M. Sadjadi
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/4763
摘要：
A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.
公开/授权文献
- US07241683B2 Stabilized photoresist structure for etching process 公开/授权日：2007-07-10
信息查询
IPC分类:
