发明申请
US20060207965A1 Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
有权
在同一电介质区域上形成高k和低k材料的方法及其在混合模式电路中的应用
- 专利标题： Method to form both high and low-k materials over the same dielectric region, and their application in mixed mode circuits
- 专利标题（中）： 在同一电介质区域上形成高k和低k材料的方法及其在混合模式电路中的应用
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申请号： US11438188申请日： 2006-05-22
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公开(公告)号： US20060207965A1公开(公告)日： 2006-09-21
- 发明人: Yelehanka Ramaghandramurthy Pradeep , Sanford Chu , Chit Hwei Ng , Jia Zheng , Purakh Verma
- 申请人： Yelehanka Ramaghandramurthy Pradeep , Sanford Chu , Chit Hwei Ng , Jia Zheng , Purakh Verma
- 专利权人： Chartered Semiconductor Manufacturing Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing Ltd.
- 主分类号： H01B13/00
- IPC分类号： H01B13/00
摘要：
A new method of provided for forming in one plane layers of semiconductor material having both high and low dielectric constants. Layers, having selected and preferably non-identical parameters of dielectric constants, are successively deposited interspersed with layers of etch stop material. The layers can be etched, creating openings there-through that can be filled with a a layer of choice.
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