发明申请
- 专利标题: Method for manufacturing granular silicon crystal
- 专利标题(中): 颗粒状硅晶体的制造方法
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申请号: US11387624申请日: 2006-03-22
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公开(公告)号: US20060213427A1公开(公告)日: 2006-09-28
- 发明人: Shin Sugawara , Eigo Takahashi , Nobuyuki Kitahara , Yoshio Miura , Hisao Arimune
- 申请人: Shin Sugawara , Eigo Takahashi , Nobuyuki Kitahara , Yoshio Miura , Hisao Arimune
- 专利权人: KYOCERA CORPORATION
- 当前专利权人: KYOCERA CORPORATION
- 优先权: JP2005-89390 20050325; JP2005-188639 20050628
- 主分类号: C30B11/00
- IPC分类号: C30B11/00 ; C30B17/00 ; C30B9/00 ; C30B21/02 ; C30B28/06
摘要:
In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
公开/授权文献
- US07323047B2 Method for manufacturing granular silicon crystal 公开/授权日:2008-01-29
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