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公开(公告)号：US20060213427A1
公开(公告)日：2006-09-28
申请号：US11387624
申请日：2006-03-22
CPC分类号： C30B11/00 , C30B29/06 , C30B29/36 , C30B29/38 , C30B29/607 , Y10T117/1056
摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。
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公开(公告)号：US07323047B2
公开(公告)日：2008-01-29
申请号：US11387624
申请日：2006-03-22
IPC分类号： C30B15/20
CPC分类号： C30B11/00 , C30B29/06 , C30B29/36 , C30B29/38 , C30B29/607 , Y10T117/1056
摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.
摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。
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公开(公告)号：US20080029020A1
公开(公告)日：2008-02-07
申请号：US11828488
申请日：2007-07-26
申请人： Shin SUGAWARA , Eigo TAKAHASHI , Hisao ARIMUNE
发明人： Shin SUGAWARA , Eigo TAKAHASHI , Hisao ARIMUNE
IPC分类号： C30B30/06
CPC分类号： C30B29/06 , C30B29/60 , C30B30/08 , Y10T117/1024
摘要： A method for producing a granular crystal includes steps of melting a crystal to be a molten solution, ejecting a droplet of the molten solution from a nozzle with a three dimensional motion. An apparatus for producing a granular crystal includes a crucible, an actuator, and at least one nozzle. The crucible contains a molten solution of a crystal. The actuator moves at least one nozzle with three-dimensional motion. At least one nozzle ejects a droplet of the molten solution with a three dimensional motion.
摘要翻译： 制造粒状晶体的方法包括以下步骤：将晶体熔化为熔融溶液，以三维运动从喷嘴喷射熔融液滴。 一种颗粒状晶体的制造装置包括坩埚，致动器和至少一个喷嘴。 坩埚含有晶体的熔融溶液。 致动器至少移动一个具有三维运动的喷嘴。 至少一个喷嘴以三维运动喷射熔融溶液的液滴。
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