发明申请
- 专利标题： Semiconductor Chip and Method for Manufacturing the Same
- 专利标题（中）： 半导体芯片及其制造方法
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申请号： US11420390申请日： 2006-05-25
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公开(公告)号： US20060214306A1公开(公告)日： 2006-09-28
- 发明人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人地址： JP Atsugi-Shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-Shi
- 优先权： JP2002368947 20021219
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L29/04
摘要：
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
公开/授权文献
- US07511380B2 Semiconductor chip and method manufacturing the same 公开/授权日：2009-03-31
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