发明申请
- 专利标题： Molecular-doped transistor and sensor
- 专利标题（中）： 分子掺杂晶体管和传感器
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申请号： US11096656申请日： 2005-04-01
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公开(公告)号： US20060220006A1公开(公告)日： 2006-10-05
- 发明人: Yong Chen , James Stasiak
- 申请人： Yong Chen , James Stasiak
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
Molecular-doped devices, including transistors and sensors, for nano-scale applications are provided. The device comprises a substrate, a source and a drain, both supported on the substrate and separated by a distance. The molecular-doped device further comprises a layer or wire of a semiconductor material formed on the substrate between the source and drain and a layer of a molecular-doped polymer formed on the semiconductor layer.
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