发明申请
US20060220169A1 Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench
有权
具有设置在形成在设置在沟槽中的隔离氧化物中的空腔中的导电材料的器件
- 专利标题： Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench
- 专利标题（中）： 具有设置在形成在设置在沟槽中的隔离氧化物中的空腔中的导电材料的器件
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申请号： US11438771申请日： 2006-05-23
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公开(公告)号： US20060220169A1公开(公告)日： 2006-10-05
- 发明人: Fernando Gonzalez , Chandra Mouli
- 申请人： Fernando Gonzalez , Chandra Mouli
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
Devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an isolation oxide. Cavities are formed in the isolation oxide and filled with a conductive material, such a doped polysilicon. Doped regions may be formed in the substrate directly adjacent the conductive material to form vertical junctions between the polysilicon and the exposed substrate at the trench sidewalls.