发明申请
US20060223268A1 Phase-change random access memory and process for producing same
审中-公开
相变随机存取存储器及其生产过程
- 专利标题： Phase-change random access memory and process for producing same
- 专利标题（中）： 相变随机存取存储器及其生产过程
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申请号： US11329990申请日： 2006-01-10
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公开(公告)号： US20060223268A1公开(公告)日： 2006-10-05
- 发明人: Hiroshi Moriya , Tomio Iwasaki
- 申请人： Hiroshi Moriya , Tomio Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-097851 20050330
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/12 ; H01L21/4763 ; H01L27/01 ; H01L31/0392
摘要：
An object of the present invention is to provide a phase-change random access memory which hardly causes the peeling of a phase-change film in a production process. In the present invention, the surface of an insulating film around the phase-change film is positioned to a more substrate side than an interface between the insulating film and the phase-change film on the insulating film is.
信息查询
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