Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号:US20080061384A1

    公开(公告)日:2008-03-13

    申请号:US11936443

    申请日:2007-11-07

    IPC分类号: H01L29/78

    摘要: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译: 在硅衬底1上形成扩散层2-5,并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,以便成为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1,使用表面为(111)晶面的其中之一,以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为(111)的基板的情况下, 在使用表面为(001)晶面的硅衬底的情况下,氧的扩散系数小于氧的扩散系数的1/100,并且控制氧扩散。 因此,控制氧扩散,防止漏电流的产生,提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

    Non-volatile phase-change memory and manufacturing method thereof
    2.
    发明申请
    Non-volatile phase-change memory and manufacturing method thereof 审中-公开
    非易失性相变存储器及其制造方法

    公开(公告)号:US20080006851A1

    公开(公告)日:2008-01-10

    申请号:US11825401

    申请日:2007-07-06

    IPC分类号: G11C11/00

    摘要: In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.

    摘要翻译: 一种非易失性相变存储器,包括:层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜,相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。 因此,流过插塞外周附近的相变膜的电流密度降低,从而抑制迁移并能够以低能量进行重写。 因此,可以实现可靠的非易失性相变存储器。

    Semiconductor device
    5.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20050179133A1

    公开(公告)日:2005-08-18

    申请号:US10975448

    申请日:2004-10-29

    CPC分类号: H01L27/11206 H01L27/112

    摘要: A semiconductor device provided with a mechanism for recording information is intended to provide a highly reliable one time programmable memory and to provide one time programmable memories at a high yield. In a one time programmable memory, a state in which the electrical resistance is high is varied to another state in which it is low by silicifying a metal with silicon and matching the high resistance state (a metal/silicon separated state) and the low resistance state (a silicide state) to 0 and 1, respectively, wherein there is used an underlayer material which reduces the interfacial energy in the interface with the silicide layer, which constitutes the low resistance state.

    摘要翻译: 设置有用于记录信息的机构的半导体器件旨在提供高度可靠的一次可编程存储器,并以高产量提供一次可编程存储器。 在一次可编程存储器中,电阻高的状态通过用硅硅化硅并匹配高电阻状态(金属/硅分离状态)和低电阻而变化到另一个低电位的状态 状态(硅化物状态)分别为0和1,其中使用降低与构成低电阻状态的硅化物层的界面中的界面能的底层材料。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07608899B2

    公开(公告)日:2009-10-27

    申请号:US11936443

    申请日:2007-11-07

    IPC分类号: H01L29/76 H01L29/94

    摘要: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译: 在硅衬底1上形成扩散层2-5,并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1,使用表面为(111)晶面的其中之一,以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为(111)的基板的情况下, 在使用表面为(001)晶面的硅衬底的情况下,氧的扩散系数小于氧的扩散系数的1/100,并且控制氧扩散。 因此,控制氧扩散,防止漏电流的产生,提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

    Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring
    7.
    发明授权
    Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring 有权
    具有(111)取向的衬底上的场效应晶体管具有氧化锆栅极绝缘体和钴或镍硅化物布线

    公开(公告)号:US07358578B2

    公开(公告)日:2008-04-15

    申请号:US10155833

    申请日:2002-05-22

    IPC分类号: H01L29/76 H01L29/94 H01L31/00

    摘要: Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

    摘要翻译: 在硅衬底1上形成扩散层2-5,并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,以便成为MOS晶体管。 氧化锆或氧化铪被用作栅介质膜6,7的主要成分。 栅介质膜6,7例如通过CVD形成。 作为基板1,使用表面为(111)晶面的其中之一,以防止氧扩散到硅基板1或栅电极8,9中。 在使用表面为(111)晶面的基板的情况下,在使用表面为(001)晶面的硅基板的情况下,氧的扩散系数小于1/100,氧气 扩散被控制。 因此,控制氧扩散,防止漏电流的产生,提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

    Semiconductor device
    8.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20070096189A1

    公开(公告)日:2007-05-03

    申请号:US11594780

    申请日:2006-11-09

    IPC分类号: H01L29/94 H01L21/8242

    摘要: In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

    摘要翻译: 为了提供具有高可靠性的半导体器件,使用第一电容器电极,形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜,以及形成为与电容器接触的第二电容器电极 并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。 或者,使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。