发明申请
- 专利标题： Semiconductor device having metal gate patterns and related method of manufacture
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申请号： US11400243申请日： 2006-04-10
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公开(公告)号： US20060226470A1公开(公告)日： 2006-10-12
- 发明人: Hag-Ju Cho , Taek-Soo Jeon , Hye-Lan Lee , Sang-Bom Kang , Yu-Gyun Shin
- 申请人： Hag-Ju Cho , Taek-Soo Jeon , Hye-Lan Lee , Sang-Bom Kang , Yu-Gyun Shin
- 优先权： KR2005-0030179 20050412
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/76 ; H01L21/8238 ; H01L21/336
摘要：
A semiconductor device comprising a semiconductor substrate having a first impurity region and a second impurity region, a first gate pattern formed on the first impurity region, and a second gate pattern formed on the second impurity region is disclosed. The first gate pattern comprises a first gate insulation layer pattern, a metal layer pattern having a first thickness, and a first polysilicon layer pattern. The second gate pattern comprises a second gate insulation layer pattern, a metal silicide layer pattern having a second thickness smaller than the first thickness, and a second polysilicon layer pattern. The metal silicide layer pattern is formed from a material substantially the same as the material from which the metal layer pattern is formed. A method for manufacturing the semiconductor device is also disclosed.
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