发明申请
- 专利标题: Single crystalline diamond and producing method thereof
- 专利标题(中): 单晶金刚石及其制造方法
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申请号: US11402062申请日: 2006-04-12
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公开(公告)号: US20060231015A1公开(公告)日: 2006-10-19
- 发明人: Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
- 申请人: Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 优先权: JP2005-117948 20050415; JP2006-060511 20060307
- 主分类号: C30B23/00
- IPC分类号: C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
摘要:
The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
公开/授权文献
- US07655208B2 Single crystalline diamond and producing method thereof 公开/授权日:2010-02-02
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