发明申请
- 专利标题： Ballistic semiconductor device
- 专利标题（中）： 弹道半导体器件
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申请号： US10542063申请日： 2004-04-14
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公开(公告)号： US20060231862A1公开(公告)日： 2006-10-19
- 发明人: Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
- 申请人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
- 优先权： JP2003-110097 20030415
- 国际申请： PCT/JP04/05282 WO 20040414
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.
公开/授权文献
- US07414261B2 Ballistic semiconductor device 公开/授权日：2008-08-19