Ballistic semiconductor device
    1.
    发明申请
    Ballistic semiconductor device 失效
    弹道半导体器件

    公开(公告)号:US20060231862A1

    公开(公告)日:2006-10-19

    申请号:US10542063

    申请日:2004-04-14

    IPC分类号: H01L31/00

    摘要: A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

    摘要翻译: 本发明的弹道半导体器件包括n型发射极层(102),由n型InGaN制成的基极层(305),n型集电极层(307),发射极阻挡层(103) 在发射极层(102)和基极层(305)之间具有比基底层(305)的带隙大的带隙的集电极阻挡层(306),并且位于基极层(305)和集电极层 (307),并且具有比基底层(305)的带隙大的带隙,并且在10GHz或更高频率下工作。

    Semiconductor device and fabrication method thereof
    2.
    发明申请
    Semiconductor device and fabrication method thereof 失效
    半导体器件及其制造方法

    公开(公告)号:US20050067615A1

    公开(公告)日:2005-03-31

    申请号:US10962492

    申请日:2004-10-13

    摘要: The present invention relates to a semiconductor device comprising a substrate (101); a semiconductor multi-layered structure formed on the substrate (101); the semiconductor multi-layered structure comprising an emitter layer (102), a base layer (105), and a collector layer (107), each composed of a group III-V n-type compound semiconductor and layered in this order; a quantum dot barrier layer (103) disposed between the emitter layer (102) and the base layer (105); a collector electrode (110), a base electrode (111) and an emitter electrode (112) connected to the collector layer (107), the base layer (105) and the emitter layer (102), respectively; the quantum dot barrier layer (103) comprising a plurality of quantum dots (103c); the quantum dots (103) being sandwiched between first and second barrier layers (103a, 103d) from the emitter layer side and the base layer side, respectively; each of the quantum dots (103c) having a convex portion that is convex to the base layer (105); a base layer (105) side interface (d1) in the second barrier layer (103d), and collector layer side and emitter layer side interfaces (d2, d3) in the base layer (105); the interfaces having curvatures (d12, d22, d23) that are convex to the collector layer (107) corresponding to the convex portions of the quantum dots (103c).

    摘要翻译: 本发明涉及一种包括衬底(101)的半导体器件; 形成在所述基板(101)上的半导体多层结构; 所述半导体多层结构包括由III-V族N型化合物半导体构成的发射极层(102),基极层(105)和集电极层(107),并且按顺序层叠; 设置在发射极层(102)和基极层(105)之间的量子点势垒层(103); 分别与集电极层(107)连接的集电极(110),基极(111)和发射极(112),基极层(105)和发射极层(102) 所述量子点势垒层(103)包括多个量子点(103c); 量子点(103)分别从发射极侧和基极侧夹在第一和第二阻挡层(103a,103d)之间; 每个量子点(103c)具有与基底层(105)凸起的凸部; 第二阻挡层(103d)中的基底层(105)侧界面(d1),以及基底层(105)中的集电极层侧和发射极层侧界面(d2,d3) 具有对应于量子点(103c)的凸部的与集电体层(107)凸起的曲率(d12,d22,d23)的界面。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US07323725B2

    公开(公告)日:2008-01-29

    申请号:US10962492

    申请日:2004-10-13

    IPC分类号: H01L29/739 H01L31/00

    摘要: The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.

    摘要翻译: 本发明涉及一种具有多层结构的半导体器件,该多层结构包括依次由III-V族n型化合物半导体构成的发射极层,基极层和集电极层; 设置在发射极层和基极层之间的量子点势垒层; 集电极,基极和发射极层全部连接到发射极; 所述量子点势垒层分别具有从所述发射极层侧和所述基极侧侧夹在第一和第二阻挡层之间的多个量子点,并且各自具有与所述基极层相对的部分。 第二阻挡层中的基底层侧界面,基底层中的集电极层侧发射极侧接合具有对应于量子点的凸部的集电极层的曲率的曲率。

    Ballistic semiconductor device
    4.
    发明授权
    Ballistic semiconductor device 失效
    弹道半导体器件

    公开(公告)号:US07414261B2

    公开(公告)日:2008-08-19

    申请号:US10542063

    申请日:2004-04-14

    IPC分类号: H01L29/06

    摘要: A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

    摘要翻译: 本发明的弹道半导体器件包括n型发射极层(102),由n型InGaN制成的基极层(305),n型集电极层(307),发射极阻挡层(103) 在发射极层(102)和基极层(305)之间具有比基底层(305)的带隙大的带隙的集电极阻挡层(306),并且位于基极层(305)和集电极层 (307),并且具有比基底层(305)的带隙大的带隙,并且在10GHz或更高频率下工作。

    Plasma oscillation switching device
    5.
    发明授权
    Plasma oscillation switching device 失效
    等离子体振荡开关装置

    公开(公告)号:US06953954B2

    公开(公告)日:2005-10-11

    申请号:US10745567

    申请日:2003-12-29

    摘要: A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.

    摘要翻译: 本发明的等离子体振荡切换装置包括半导体基板101, 第一阻挡层103,其由III-V族化合物半导体构成并形成在基板上; 沟道层104,其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105,其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107,栅电极109和漏电极108,其中第一阻挡层包括n型扩散层103a,第二阻挡层包括p型扩散层105a,第二势垒层包括p型扩散层105a, 通道层比第一和第二阻挡层的带隙小,二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积,二维空穴气体HG被积聚 在第二阻挡层和沟道层之间的边界处的价带处,并且这些电极通过绝缘层106形成在阻挡层上。

    Semiconductor light emitting device and method of fabricating the same
    7.
    发明授权
    Semiconductor light emitting device and method of fabricating the same 失效
    半导体发光器件及其制造方法

    公开(公告)号:US07009216B2

    公开(公告)日:2006-03-07

    申请号:US10718581

    申请日:2003-11-24

    IPC分类号: H01L33/00 H01S3/19

    摘要: A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).

    摘要翻译: 本发明的半导体发光器件包括n型InP衬底(1)和在n型InP衬底(1)上形成为条形的条形结构(10),并且由n型InP衬底 下包层(3),在与n型InP衬底(1)平行的方向上具有谐振器的有源层(4)和p型InP上覆层(5)。 条状结构(10)具有光子晶体结构(2),其具有矩形格子状的凹部9,并且配置有光子晶体结构(2)的凹部(9)的方向与谐振器方向 。 条状上电极(6)形成在条状结构(10)上以沿谐振器方向延伸。 如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底(1)的方向辐射光。

    Process of fabricating semiconductor light emitting device
    8.
    发明授权
    Process of fabricating semiconductor light emitting device 失效
    制造半导体发光器件的工艺

    公开(公告)号:US06778308B2

    公开(公告)日:2004-08-17

    申请号:US10652044

    申请日:2003-09-02

    IPC分类号: G02F1015

    摘要: A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.

    摘要翻译: 一种垂直光学调制器,包括:第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极,其形成在电介质层内以形成整体的网状形状,以在网状形状的交点处彼此分离并且接触 同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。

    Process of fabricating semiconductor light emitting device
    9.
    发明授权
    Process of fabricating semiconductor light emitting device 失效
    制造半导体发光器件的工艺

    公开(公告)号:US06917457B2

    公开(公告)日:2005-07-12

    申请号:US10889027

    申请日:2004-07-13

    IPC分类号: G02F1/015 G02F1/017

    摘要: A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.

    摘要翻译: 一种垂直光学调制器,包括:第一导电类型的第一半导体层; 第二导电类型的第二半导体层结合到第一半导体层; 第二导电类型的第三半导体层; 形成在所述第二半导体层和所述第三半导体层之间的电介质层; 具有多个导电片的天线电极,其形成在电介质层内以形成网状整体,在网状形状的交点处彼此分离并且接触 同时具有第二半导体层和第三半导体层; 电连接到第一半导体层的第一电极; 以及电连接到第三半导体层的第二电极。