- 专利标题： Semiconductor device and method for manufacturing semiconductor device
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申请号： US11475879申请日： 2006-06-28
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公开(公告)号： US20060244083A1公开(公告)日： 2006-11-02
- 发明人: Kazuhiro Eguchi , Seiji Inumiya , Yoshitaka Tsunashima
- 申请人： Kazuhiro Eguchi , Seiji Inumiya , Yoshitaka Tsunashima
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2002-001546 20020108
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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