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1.
公开(公告)号:US20080242115A1
公开(公告)日:2008-10-02
申请号:US11902300
申请日:2007-09-20
IPC分类号: H01L21/31
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
摘要翻译: 一种半导体器件,包括半导体衬底,形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质,所述氧化硅膜含有所述金属元素,所述金属元素包括在其下表面附近的第一区域, 上表面和第一和第二区域之间的第三区域,包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布,存在于第三区域中的密度分布的峰值, 以及形成在栅极电介质上的电极。
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2.
公开(公告)号:US07282774B2
公开(公告)日:2007-10-16
申请号:US11475879
申请日:2006-06-28
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
摘要翻译: 一种半导体器件,包括半导体衬底,形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质,所述氧化硅膜含有所述金属元素,所述金属元素包括在其下表面附近的第一区域, 上表面和第一和第二区域之间的第三区域,包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布,存在于第三区域中的密度分布的峰值, 以及形成在栅极电介质上的电极。
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3.
公开(公告)号:US07858536B2
公开(公告)日:2010-12-28
申请号:US11902300
申请日:2007-09-20
IPC分类号: H01L21/31
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
摘要翻译: 一种半导体器件,包括半导体衬底,形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质,所述氧化硅膜含有所述金属元素,所述金属元素包括在其下表面附近的第一区域, 上表面和第一和第二区域之间的第三区域,包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布,存在于第三区域中的密度分布的峰值, 以及形成在栅极电介质上的电极。
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公开(公告)号:US20060244083A1
公开(公告)日:2006-11-02
申请号:US11475879
申请日:2006-06-28
IPC分类号: H01L29/78
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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公开(公告)号:US20050170666A1
公开(公告)日:2005-08-04
申请号:US10999937
申请日:2004-12-01
申请人: Katsuyuki Sekine , Yoshitaka Tsunashima , Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Kazuhiro Eguchi
发明人: Katsuyuki Sekine , Yoshitaka Tsunashima , Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Kazuhiro Eguchi
IPC分类号: H01L21/316 , H01L21/314 , H01L29/78 , H01L21/31 , H01L21/469 , H01L21/425 , H01L21/22
CPC分类号: H01L21/02321 , H01L21/02148 , H01L21/02159 , H01L21/022 , H01L21/28185 , H01L21/28194 , H01L21/3143 , H01L21/31645 , H01L29/518
摘要: A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.
摘要翻译: 本文公开的半导体器件的制造方法包括:在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。
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公开(公告)号:US07501335B2
公开(公告)日:2009-03-10
申请号:US10999937
申请日:2004-12-01
申请人: Katsuyuki Sekine , Yoshitaka Tsunashima , Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Kazuhiro Eguchi
发明人: Katsuyuki Sekine , Yoshitaka Tsunashima , Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Kazuhiro Eguchi
IPC分类号: H01L21/336 , H01L29/78 , H01L21/469
CPC分类号: H01L21/02321 , H01L21/02148 , H01L21/02159 , H01L21/022 , H01L21/28185 , H01L21/28194 , H01L21/3143 , H01L21/31645 , H01L29/518
摘要: A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.
摘要翻译: 本文公开的半导体器件的制造方法包括:在基板上形成含有金属的硅酸盐膜; 并通过使用ND3气体将氮和氘引入硅酸盐膜。
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公开(公告)号:US07101775B2
公开(公告)日:2006-09-05
申请号:US10911516
申请日:2004-08-05
IPC分类号: H01L21/3205
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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公开(公告)号:US20050158932A1
公开(公告)日:2005-07-21
申请号:US10995296
申请日:2004-11-24
申请人: Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Kazuhiro Eguchi , Yoshitaka Tsunashima
发明人: Seiji Inumiya , Akio Kaneko , Motoyuki Sato , Katsuyuki Sekine , Kazuhiro Eguchi , Yoshitaka Tsunashima
IPC分类号: H01L29/423 , H01L21/316 , H01L21/336 , H01L21/8238 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/31 , H01L21/8234
CPC分类号: H01L29/6656 , H01L21/28202 , H01L21/823828 , H01L21/823857 , H01L29/513 , H01L29/518
摘要: A method of manufacturing a semiconductor device, comprises: providing a gate insulation layer of a high dielectric constant containing a metal element on a surface of a semiconductor substrate, part of which becoming a channel; providing a first conductive layer containing a silicon element on the surface of said gate insulation layer, said first conductive layer being a gate electrode; and introducing nitrogen or oxygen onto an interface between said gate insulation layer and said first conductive layer by executing a thermal treatment upon said semiconductor substrate in a atmosphere containing a nitriding agent or an oxidizing agent.
摘要翻译: 一种制造半导体器件的方法,包括:在半导体衬底的表面上提供包含金属元素的高介电常数的栅极绝缘层,其中一部分变成沟道; 在所述栅极绝缘层的表面上提供含有硅元素的第一导电层,所述第一导电层是栅电极; 以及通过在包含氮化剂或氧化剂的气氛中对所述半导体衬底进行热处理,将氮或氧引入到所述栅极绝缘层和所述第一导电层之间的界面上。
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9.
公开(公告)号:US06844234B2
公开(公告)日:2005-01-18
申请号:US10101913
申请日:2002-03-21
IPC分类号: H01L21/31 , C23C16/30 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/28 , H01L21/316 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/3205
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
摘要翻译: 一种半导体器件,包括半导体衬底,形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质,所述氧化硅膜含有所述金属元素,所述金属元素包括在其下表面附近的第一区域, 上表面和第一和第二区域之间的第三区域,包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布,存在于第三区域中的密度分布的峰值, 以及形成在栅极电介质上的电极。
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公开(公告)号:US20050006674A1
公开(公告)日:2005-01-13
申请号:US10911516
申请日:2004-08-05
IPC分类号: H01L21/31 , C23C16/30 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/28 , H01L21/316 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336 , H01L29/76 , H01L31/062 , B05D1/36 , B05D7/00
CPC分类号: H01L29/511 , C23C16/30 , C23C16/45523 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28229 , H01L21/31604 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要: A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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