发明申请
- 专利标题： A MOS Transistor with a Three-Step Source/Drain Implant
- 专利标题（中）： 具有三步源/漏植入物的MOS晶体管
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申请号： US11457569申请日： 2006-07-14
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公开(公告)号： US20060246645A1公开(公告)日： 2006-11-02
- 发明人: Mahalingam Nandakumar , Seetharaman Sridhar , Mark Rodder
- 申请人： Mahalingam Nandakumar , Seetharaman Sridhar , Mark Rodder
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/336
摘要：
A new MOS transistor is described. The transistor has a source/drain region that comprises 3 portions. Each portion is the result of a separate ion implant step. The combination of the three portions of the source/drain region yields a transistor of superior performance with high drive current, low sub-threshold current and gate-edge leakage.
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