发明申请
US20060246722A1 Etching technique for the fabrication of thin (AI, In, Ga)N layers
有权
用于制造薄(Al,In,Ga)N层的蚀刻技术
- 专利标题: Etching technique for the fabrication of thin (AI, In, Ga)N layers
- 专利标题(中): 用于制造薄(Al,In,Ga)N层的蚀刻技术
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申请号: US11403288申请日: 2006-04-13
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公开(公告)号: US20060246722A1公开(公告)日: 2006-11-02
- 发明人: James Speck , Benjamin Haskell , P. Pattison , Troy Baker
- 申请人: James Speck , Benjamin Haskell , P. Pattison , Troy Baker
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; B44C1/22 ; H01L21/302
摘要:
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.