发明申请
- 专利标题： Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
- 专利标题（中）： 用不同组成轮廓的氧化物层强化介电层和阻挡层之间的界面
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申请号： US11123501申请日： 2005-05-04
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公开(公告)号： US20060252273A1公开(公告)日： 2006-11-09
- 发明人: Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang Cui , Daemian Raj , Juan Rocha-Alvarez , Francimar Schmitt , Bok Kim
- 申请人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang Cui , Daemian Raj , Juan Rocha-Alvarez , Francimar Schmitt , Bok Kim
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
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