发明申请
- 专利标题: Method of forming closed air gap interconnects and structures formed thereby
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申请号: US11405287申请日: 2006-04-17
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公开(公告)号: US20060258147A1公开(公告)日: 2006-11-16
- 发明人: Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
- 申请人: Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L23/48
摘要:
A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.
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