发明申请
- 专利标题： Pattern forming method and method of manufacturing semiconductor device
- 专利标题（中）： 图案形成方法和制造半导体器件的方法
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申请号： US11431823申请日： 2006-05-11
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公开(公告)号： US20060263726A1公开(公告)日： 2006-11-23
- 发明人: Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
- 申请人： Shinichi Ito , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
- 优先权： JP2005-141193 20050513
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
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