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    Pattern formation method and method for manufacturing semiconductor device
    1.
    发明授权
    Pattern formation method and method for manufacturing semiconductor device 失效
    图案形成方法和制造半导体器件的方法

    公开(公告)号：US08747682B2

    公开(公告)日：2014-06-10

    申请号：US12849599

    申请日：2010-08-03

    申请人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

    发明人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara ,  Yukiko Sato ,  Yoshihisa Kawamura

    IPC分类号： C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01B13/00 ,  B44C1/22

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149

    摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

    摘要翻译： 根据一个实施例，公开了图案形成方法。 该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。 该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。 该方法包括进行每个区域的每个嵌段共聚物的相分离。 该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

    Steam electrolytic apparatus and steam electrolytic method
    6.
    发明申请
    Steam electrolytic apparatus and steam electrolytic method 审中-公开
    蒸汽电解设备和蒸汽电解法

    公开(公告)号：US20080254333A1

    公开(公告)日：2008-10-16

    申请号：US12100176

    申请日：2008-04-09

    申请人： Masato YOSHINO ,  Kentaro Matsunaga ,  Seiji Fujiwara ,  Hiroyuki Yamauchi ,  Shigeo Kasai

    发明人： Masato YOSHINO ,  Kentaro Matsunaga ,  Seiji Fujiwara ,  Hiroyuki Yamauchi ,  Shigeo Kasai

    IPC分类号： H01M8/10

    CPC分类号： H01M8/1213 ,  C25B1/04 ,  C25B9/08 ,  H01M4/8885 ,  H01M4/92 ,  H01M4/921 ,  Y02E60/366

    摘要： To provide a high-temperature steam electrolytic apparatus and method that steam can be used as a common gas between a hydrogen electrode and an oxygen electrode, and the steam can be electrolyzed efficiently while the electrodes of the electrochemical cell are suppressed from oxidative and reductive degradation. A steam electrolytic apparatus 10, comprising an electrochemical cell composed of an electrolyte containing a solid oxide mainly, a hydrogen electrode and an oxygen electrode; a steam supply portion 13 for supplying the electrochemical cell 11 with a gas containing steam as a main component; a hydrogen gas discharge portion 14 for discharging hydrogen generated by the hydrogen electrode by electrolysis of the steam; and an oxygen gas discharge portion 15 for discharging oxygen generated by the oxygen electrode by electrolysis of the steam, wherein the oxygen electrode contains a reduction-resistant material.

    摘要翻译： 为了提供一种高温蒸汽电解设备和方法，可以将蒸汽用作氢电极和氧电极之间的普通气体，并且可以有效地电解蒸汽，同时抑制电化学电池的电极氧化还原降解 。 一种蒸汽电解装置10，包括由主要含有固体氧化物的电解质组成的电化学电池，氢电极和氧电极; 用于向电化学电池11供应含有蒸汽作为主要成分的气体的蒸汽供应部分13; 用于通过蒸汽电解来排出由氢电极产生的氢的氢气排出部分14; 以及氧气排出部15，用于通过蒸汽的电解来排出由氧电极产生的氧，其中氧电极含有还原性材料。

    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device
    7.
    发明申请
    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
    基板处理方法，基板处理装置以及半导体装置的制造方法

    公开(公告)号：US20070190462A1

    公开(公告)日：2007-08-16

    申请号：US11654565

    申请日：2007-01-18

    申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70341 ,  Y10S430/162

    摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

    摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

    Immersion exposure method and apparatus, and manufacturing method of a semiconductor device
    8.
    发明申请
    Immersion exposure method and apparatus, and manufacturing method of a semiconductor device 有权
    浸渍曝光方法和装置以及半导体装置的制造方法

    公开(公告)号：US20060177776A1

    公开(公告)日：2006-08-10

    申请号：US11315000

    申请日：2005-12-23

    申请人： Kentaro Matsunaga ,  Takuya Kono ,  Shinichi Ito

    发明人： Kentaro Matsunaga ,  Takuya Kono ,  Shinichi Ito

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70341

    摘要： There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

    摘要翻译： 公开了一种在液体至少部分地填充在待曝光的基板和进行曝光处理的曝光装置的投影光学系统之间进行曝光处理的浸渍曝光方法，包括进行以下处理： 与具有与基板的外周部分相邻的区域的液体的接触角相比，与基板的主表面的至少外周部分形成与液体大的接触角，该区域是表面的一部分 支撑包含在曝光装置中的基板的基板支撑部件的基板支撑侧，进行曝光处理。

    Imprint method
    9.
    发明授权
    Imprint method 有权
    印记法

    公开(公告)号：US08419995B2

    公开(公告)日：2013-04-16

    申请号：US12563461

    申请日：2009-09-21

    申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

    IPC分类号： B28B11/08 ,  B29C35/08

    CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

    摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

    Method of manufacturing a semiconductor device
    10.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08158332B2

    公开(公告)日：2012-04-17

    申请号：US12689830

    申请日：2010-01-19

    申请人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara

    发明人： Kentaro Matsunaga ,  Tomoya Oori ,  Eishi Shiobara

    IPC分类号： G03C5/00

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L27/11517 ,  H01L27/11521

    摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.

    摘要翻译： 根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。