发明申请
- 专利标题: Semiconductor device and manufacturing method of the same
- 专利标题(中): 半导体器件及其制造方法相同
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申请号: US11496452申请日: 2006-08-01
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公开(公告)号: US20060267112A1公开(公告)日: 2006-11-30
- 发明人: Satoshi Inaba , Makoto Fujiwara
- 申请人: Satoshi Inaba , Makoto Fujiwara
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2003-352628 20031010
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A semiconductor device includes a first device region including a plurality of source regions and a plurality of drain regions of first conductivity type transistors, a plurality of loop-shaped gate electrode regions of the first conductivity type transistors, a second device region including a plurality of source regions and a plurality of drain regions of a second conductivity type transistors, a plurality of loop-shaped gate electrode regions of the second conductivity type transistors, a first wiring configured to supply a first voltage to at least one of the source regions of the first device region, a second wiring configured to supply a second voltage to at least one of the source regions of the second device region, and a third wiring electrically coupled to the drain regions of the first and second device regions and to the gate electrode regions of the first and the second conductivity type transistors.
公开/授权文献
- US07456481B2 Semiconductor device and manufacturing method of the same 公开/授权日:2008-11-25