发明申请
- 专利标题： Semiconductor device and manufacturing of the same
- 专利标题（中）： 半导体器件及其制造相同
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申请号： US11439260申请日： 2006-05-24
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公开(公告)号： US20060267116A1公开(公告)日： 2006-11-30
- 发明人: Yasuhiro Shimamoto , Jiro Yugami , Masao Inoue , Masaharu Mizutani
- 申请人： Yasuhiro Shimamoto , Jiro Yugami , Masao Inoue , Masaharu Mizutani
- 优先权： JP2005-150938 20050524
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×1013 to 5×1014 atoms/cm2. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×1018/cm3.
公开/授权文献
- US07915686B2 Semiconductor device and manufacturing of the same 公开/授权日：2011-03-29
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