- 专利标题: Semiconductor device and method for manufacturing the same
-
申请号: US11498164申请日: 2006-08-03
-
公开(公告)号: US20060270114A1公开(公告)日: 2006-11-30
- 发明人: Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
- 申请人: Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
- 申请人地址: JP Atsugi-shi 243-0036
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi 243-0036
- 优先权: JP2003-347678 20031006
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
公开/授权文献
- US08481370B2 Semiconductor device and method for manufacturing the same 公开/授权日:2013-07-09
信息查询
IPC分类: