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    Semiconductor device and method of manufacturing the same
    5.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07888714B2

    公开(公告)日：2011-02-15

    申请号：US11226472

    申请日：2005-09-15

    申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    IPC分类号： H01L31/062

    CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

    摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

    摘要翻译： 考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

    Semiconductor device and method of manufacturing the same
    6.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070187790A1

    公开(公告)日：2007-08-16

    申请号：US11226472

    申请日：2005-09-15

    申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

    IPC分类号： H01L31/0203

    CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

    摘要： [Abstract]Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

    摘要翻译： [摘要]考虑到进一步促进传感器元件的高输出和小型化，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08415664B2

    公开(公告)日：2013-04-09

    申请号：US13271272

    申请日：2011-10-12

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08053816B2

    公开(公告)日：2011-11-08

    申请号：US11681638

    申请日：2007-03-02

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。 此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。 本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触， 并且其中滤色器的端部位于光电转换层的另一端部的内部。

    Photoelectric conversion device
    9.
    发明授权
    Photoelectric conversion device 有权
    光电转换装置

    公开(公告)号：US08207591B2

    公开(公告)日：2012-06-26

    申请号：US13206544

    申请日：2011-08-10

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/102

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.

    摘要翻译： 光电转换装置包括：第一电极; 并且在第一电极之上，包括具有一个导电性的第一半导体层，第一半导体层上的第二半导体层和具有与第二半导体层的一个导电性相反的导电性的第三半导体层的光电转换层。 绝缘层在第三半导体层之上，第二电极在绝缘层的上方，并通过绝缘层与第三半导体层电连接。 在不与绝缘层重叠的光电转换层的区域中去除第三半导体层和第二半导体层的一部分。

    Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device
    10.
    发明申请
    Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device 有权
    光电转换装置及其制造方法及半导体装置

    公开(公告)号：US20110291090A1

    公开(公告)日：2011-12-01

    申请号：US13206544

    申请日：2011-08-10

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

    摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。