A method for forming a semiconductor device. A substrate is provided, wherein the substrate has recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates and upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions and the protrusions. Buried portions of conductive material are formed in spaces between the spacers. The substrate, the spacers and the buried portions are patterned to form parallel shallow trenches for defining active regions. A layer of dielectric material is formed in the shallow trenches, wherein some of the buried portions serve as buried bit line contacts. Word lines are formed across the recessed gates, wherein at least one of the word lines comprises portions overlapping the recessed gates. At least one of the overlapped portions has a narrower width than at least one of the recessed gates.