- 专利标题： Semiconductor device
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申请号： US11447567申请日： 2006-06-05
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公开(公告)号： US20060273329A1公开(公告)日： 2006-12-07
- 发明人: Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
- 申请人： Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 优先权： JPJP2005-167482 20050607
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L31/12 ; H01L29/22 ; H01L29/24 ; H01L27/15 ; H01L29/26
摘要：
The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.
公开/授权文献
- US07488970B2 Semiconductor device 公开/授权日：2009-02-10
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