利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.025 秒)

    Device connector
    1.
    发明授权
    Device connector 有权
    设备连接器

    公开(公告)号：US08257096B2

    公开(公告)日：2012-09-04

    申请号：US12942681

    申请日：2010-11-09

    申请人： Hiroyuki Matsuoka ,  Daisuke Nakagawa

    发明人： Hiroyuki Matsuoka ,  Daisuke Nakagawa

    IPC分类号： H01R12/00

    CPC分类号： H01R13/748 ,  H01R13/504

    摘要： A device connector is provided with a metal reinforcing plate (30) including an opening (31) for permitting the passage of terminal fittings, a housing main body (10), a flange (11) formed by insert molding using the reinforcing plate (30) and synthetic resin, a device-side housing portion (12) to be accommodated into a connector mounting hole, and terminal fittings (15) held in the housing main body (10) while being passed through the opening (31). The reinforcing plate (30) is beveled along a peripheral edge thereof to form an R-surface (36). Thus, the device connector is produced at a low cost and eliminates possible starting points of cracks created in the synthetic resin covering the peripheral edge of the metal reinforcing plate (30).

    摘要翻译： 一种设备连接器设置有金属加强板（30），其包括用于允许端子接头通过的开口（31），壳体主体（10），通过使用加强板（30）插入成型形成的凸缘（11） ）和合成树脂，容纳在连接器安装孔中的装置侧容纳部分（12）和在通过开口（31）的同时保持在壳体主体（10）中的端子接头（15）。 加强板（30）沿着其周边边缘倾斜以形成R表面（36）。 因此，以低成本制造器件连接器，并且消除了覆盖金属加强板（30）的周边边缘的合成树脂产生的裂缝的可能起点。

    Device connector
    2.
    发明授权
    Device connector 有权
    设备连接器

    公开(公告)号：US08187030B2

    公开(公告)日：2012-05-29

    申请号：US12917714

    申请日：2010-11-02

    申请人： Hiroyuki Matsuoka ,  Daisuke Nakagawa

    发明人： Hiroyuki Matsuoka ,  Daisuke Nakagawa

    IPC分类号： H01R13/73

    CPC分类号： H01R13/5202 ,  H01R4/34 ,  H01R13/504 ,  H01R13/707 ,  H01R13/748 ,  H01R2105/00

    摘要： A device connector has a housing main body (10), a device-side housing portion (12) to be accommodated in a connector mounting hole, a reinforcing plate (30) including an opening (31) for permitting the passage of terminal fittings, and a flange (11) formed by insert molding using the reinforcing plate (30) and synthetic resin, and terminal fittings 15. An outer peripheral end surface of the reinforcing plate (30) is exposed. The device connector is produced with a reduced cost by insert molding using a metal reinforcing plate as an insert while preventing a crack from being created in a synthetic resin portion covering the reinforcing plate (30).

    摘要翻译： 装置连接器具有壳体主体（10），容纳在连接器安装孔中的装置侧容纳部分（12），包括用于允许端子配件通过的开口（31）的加强板（30） 以及通过使用加强板（30）和合成树脂的嵌件成型以及端子接头15形成的凸缘（11）。加强板（30）的外周端面露出。 通过使用金属加强板作为插入件通过嵌入成型降低成本，同时防止在覆盖加强板（30）的合成树脂部分中产生裂纹。

    NITRIDE SEMICONDUCTOR LASER DEVICE
    4.
    发明申请
    NITRIDE SEMICONDUCTOR LASER DEVICE 有权
    氮化物半导体激光器件

    公开(公告)号：US20090141765A1

    公开(公告)日：2009-06-04

    申请号：US12269363

    申请日：2008-11-12

    申请人： Shinichi KOHDA ,  Daisuke NAKAGAWA

    发明人： Shinichi KOHDA ,  Daisuke NAKAGAWA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3216 ,  H01S2304/04

    摘要： A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer.

    摘要翻译： 氮化物半导体激光器件具有III族氮化物半导体多层结构。 III族氮化物半导体多层结构包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层，p型半导体层为 通过将p侧引导层，与p侧引导层接触的p型电子阻挡层和与p型电子阻挡层接触的p型覆盖层从靠近 发光层。 p侧引导层通过层叠由含有Al的III族氮化物半导体层和不含Al的III族氮化物半导体层构成的层而形成。 p型覆层由含有Al的III族氮化物半导体构成，p型电子阻挡层由比p型覆层更大的Al组成的III族氮化物半导体构成。

    Method of manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus
    7.
    发明申请
    Method of manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus 审中-公开
    制造半导体发光装置和半导体发光装置的方法

    公开(公告)号：US20070026550A1

    公开(公告)日：2007-02-01

    申请号：US11483314

    申请日：2006-07-06

    申请人： Masahiro Murayama ,  Daisuke Nakagawa ,  Shinichi Kohda ,  Toshio Nishida

    发明人： Masahiro Murayama ,  Daisuke Nakagawa ,  Shinichi Kohda ,  Toshio Nishida

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/20 ,  H01S5/2009 ,  H01S5/22 ,  H01S2304/12

    摘要： A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side etching step of selectively etching a side surface of a mask layer having a high etching rate to form a groove portion in the p-type semiconductor layer; the insulating film forming step of forming an insulating film so as to cover the p-type semiconductor layer; the mask layer removing step; and the electrode layer forming step. A semiconductor light emitting apparatus according to the invention includes: a substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer on which a mesa portion projecting above the active layer is formed; an insulating film which covers the mesa portion to expose an upper surface of the mesa portion; and an electrode layer. Then-type semiconductor layer, the active layer, and the p-type semiconductor layer are made of a Group III nitride based compound semiconductor.

    摘要翻译： 根据本发明的制造半导体发光装置的方法包括：掩模层形成步骤，从p型半导体层附近的一侧以蚀刻速率的降序形成两个掩模层; 掩模层蚀刻步骤; 半导体层蚀刻步骤; 侧蚀刻步骤，选择性地蚀刻具有高蚀刻速率的掩模层的侧表面，以在p型半导体层中形成沟槽部分; 所述绝缘膜形成步骤形成绝缘膜以覆盖所述p型半导体层; 掩模层去除步骤; 和电极层形成步骤。 根据本发明的半导体发光装置包括：基板; n型半导体层; 活性层 形成在有源层上方突出的台面部的p型半导体层; 绝缘膜，其覆盖所述台面部，露出所述台面部的上表面; 和电极层。 随后型半导体层，有源层和p型半导体层由III族氮化物基化合物半导体制成。

    Vehicle body frame structure of two-wheeler
    8.
    发明授权
    Vehicle body frame structure of two-wheeler 有权
    两轮车车架结构

    公开(公告)号：US07114588B2

    公开(公告)日：2006-10-03

    申请号：US10874350

    申请日：2004-06-24

    申请人： Takashi Kudo ,  Daisuke Nakagawa

    发明人： Takashi Kudo ,  Daisuke Nakagawa

    IPC分类号： B62M7/00

    CPC分类号： B62M7/00

    摘要： A vehicle body frame structure for a two-wheeler provides a sufficient distance between exhaust pipes and a front wheel, to facilitate the arrangement of a heat-discharging member such as a radiator or an oil cooler, or other auxiliary components, to increase heat-discharging property by increasing the capacity of the heat-discharging member, and improving flexibility in design such as the shape or the layout of the vehicle body frame and the exhaust pipes. In a two-wheel vehicle having an engine mounted to a vehicle body frame, the engine having exhaust pipes extending forwardly and downwardly and a pair of left and right down tubes extending substantially downwardly from a head pipe provided at the front end of the vehicle body frame, the vehicle body frame includes a first cross member for connecting the left and right down tubes, and the first cross member is formed with arcuate recesses for allowing part of the exhaust pipes to pass therethrough.

    摘要翻译： 用于二轮车辆的车体框架结构在排气管和前轮之间提供足够的距离，以便于诸如散热器或油冷却器或其他辅助部件的排热构件的布置，以增加热 - 通过增加放热构件的容量来提高排出性能，并提高诸如车体框架和排气管的形状或布局的设计的灵活性。 在具有安装在车身框架上的发动机的两轮车辆中，具有向前和向下延伸的排气管的发动机和从设置在车身前端的头管基本上向下延伸的一对左右下管 车体框架包括用于连接左右下管的第一横向构件，并且第一横向构件形成有用于允许排气管的一部分通过的弓形凹部。

    Vehicle body frame structure of two-wheeler
    9.
    发明申请
    Vehicle body frame structure of two-wheeler 有权
    两轮车车架结构

    公开(公告)号：US20050029032A1

    公开(公告)日：2005-02-10

    申请号：US10874350

    申请日：2004-06-24

    申请人： Takashi Kudo ,  Daisuke Nakagawa

    发明人： Takashi Kudo ,  Daisuke Nakagawa

    IPC分类号： B62M7/00

    CPC分类号： B62M7/00

    摘要： A vehicle body frame structure for a two-wheeler provides a sufficient distance between exhaust pipes and a front wheel, to facilitate the arrangement of a heat-discharging member such as a radiator or an oil cooler, or other auxiliary components, to increase heat-discharging property by increasing the capacity of the heat-discharging member, and improving flexibility in design such as the shape or the layout of the vehicle body frame and the exhaust pipes. In a two-wheel vehicle having an engine mounted to a vehicle body frame, the engine having exhaust pipes extending forwardly and downwardly and a pair of left and right down tubes extending substantially downwardly from a head pipe provided at the front end of the vehicle body frame, the vehicle body frame includes a first cross member for connecting the left and right down tubes, and the first cross member is formed with arcuate recesses for allowing part of the exhaust pipes to pass therethrough.

    摘要翻译： 用于二轮车辆的车体框架结构在排气管和前轮之间提供足够的距离，以便于诸如散热器或油冷却器或其他辅助部件的排热构件的布置，以增加热 - 通过增加放热构件的容量来提高排出性能，并提高诸如车体框架和排气管的形状或布局的设计的灵活性。 在具有安装在车身框架上的发动机的两轮车辆中，具有向前和向下延伸的排气管的发动机和从设置在车身前端的头管基本上向下延伸的一对左右下管 车体框架包括用于连接左右下管的第一横向构件，并且第一横向构件形成有用于允许排气管的一部分通过的弓形凹部。