发明申请
- 专利标题： Semiconductor photodetector and method for manufacturing the same
- 专利标题（中）： 半导体光电探测器及其制造方法
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申请号： US11259196申请日： 2005-10-27
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公开(公告)号： US20060273421A1公开(公告)日： 2006-12-07
- 发明人: Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
- 申请人： Nami Yasuoka , Haruhiko Kuwatsuka , Toru Uchida , Yoshihiro Yoneda
- 申请人地址： JP Kawasaki JP Nakakoma-gun
- 专利权人： FUJITSU LIMITED,EUDYNA DEVICES, INC.
- 当前专利权人： FUJITSU LIMITED,EUDYNA DEVICES, INC.
- 当前专利权人地址： JP Kawasaki JP Nakakoma-gun
- 优先权： JP2005-162416 20050602
- 主分类号： H01L31/107
- IPC分类号： H01L31/107
摘要：
In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
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