公开(公告)号：US07875946B2

公开(公告)日：2011-01-25

申请号：US11259196

申请日：2005-10-27

申请人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

发明人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC分类号： H01L31/107

CPC分类号： H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

摘要： In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

摘要翻译： 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构 包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增 在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

公开(公告)号：US08772896B2

公开(公告)日：2014-07-08

申请号：US12926484

申请日：2010-11-22

申请人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

发明人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC分类号： H01L31/107

CPC分类号： H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

摘要翻译： 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US20060273421A1

公开(公告)日：2006-12-07

申请号：US11259196

申请日：2005-10-27

申请人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

发明人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC分类号： H01L31/107

CPC分类号： H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

摘要翻译： 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US20110068428A1

公开(公告)日：2011-03-24

申请号：US12926484

申请日：2010-11-22

申请人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

发明人： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC分类号： H01L31/107 ,  H01L31/18

CPC分类号： H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

摘要： In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

摘要翻译： 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US07081639B2

公开(公告)日：2006-07-25

申请号：US09873264

申请日：2001-06-05

申请人： Toru Uchida ,  Chikashi Anayama

发明人： Toru Uchida ,  Chikashi Anayama

IPC分类号： H01L31/0304

CPC分类号： B82Y20/00 ,  H01L31/03046 ,  H01L31/035263 ,  H01L31/105 ,  Y02E10/544

摘要： A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.

摘要翻译： 半导体光电检测装置包括由在其中蓄积压缩应变的光吸收层和在其中累积补偿拉伸应变的应力补偿层的交替重复堆叠形成的光电检测层，其中光吸收层的厚度大于厚度 的应力补偿层。

公开(公告)号：US08968492B2

公开(公告)日：2015-03-03

申请号：US12308966

申请日：2008-10-01

申请人： Toru Uchida

发明人： Toru Uchida

IPC分类号： C22C9/04 ,  B22C9/22

CPC分类号： C22C9/04 ,  B22C9/22

摘要： There is provided a brass free from lead (Pb) and possessing excellent machinability, castability, mechanical properties and other properties. A brass consisting of not less than 55% by weight and not more than 75% by weight of copper (Cu), not less than 0.3% by weight and not more than 4.0% by weight of bismuth (Bi), and y % by weight of boron (B) and x % by weight of silicon (Si), y and x satisfying the following requirements: 0≦x≦2.0, 0≦y≦0.3, and y>−0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight ≦Bi

摘要翻译： 提供了不含铅（Pb）的黄铜，具有优异的机械加工性，浇铸性，机械性能等特性。 由不少于55重量％且不超过75重量％的铜（Cu）组成的黄铜，不小于0.3重量％且不大于4.0重量％的铋（Bi），y％由 0≤n1E; x＆nlE; 2.0,0＆nlE; y＆nlE; 0.3，y> -0.15x + 0.015ab，其中a为硼（B）重量和x重量％硅（Si），y和x满足以下要求： Bi为0.3％（重量）时，Bi≤0.75％（重量）; 0.85当Bi为0.75％（重量）时，Bi <1.5％（重量）; 当Bi为1.5重量％且nlE时为1;当Zn（Zn）的表观含量不小于37％且小于41％时，Bi为1; 4.0重量％，b为1; 和0.75当Zn的表观含量不小于41％且不大于45％时，余量由Zn和不可避免的杂质组成，具有优异的浇铸性，以及例如机械加工性和机械性能。

公开(公告)号：US06424434B1

公开(公告)日：2002-07-23

申请号：US09232812

申请日：1999-01-19

申请人： Toru Uchida

发明人： Toru Uchida

IPC分类号： H04N104

CPC分类号： H04N1/03 ,  H04N2201/02456 ,  H04N2201/02458 ,  H04N2201/02468 ,  H04N2201/02477 ,  H04N2201/02485

摘要： Disclosed is an image scanning unit which has: a CCD substrate which is mounted on a block; three groups of adjustment fastening members to position the CCD substrate in three dimensional directions orthogonal to one another; and a springy member to press each of the adjustment fastening members against receiving part of each of the adjustment fastening members; wherein the three groups of adjustment fastening members are of a first group of fastening members to conduct the focus adjustment by independently positioning the CCD substrate in a direction perpendicular to the plane of the CCD substrate at both ends of CCD in the longitudinal direction, a second group of fastening members to conduct the sub-scanning adjustment by independently positioning the CCD substrate in a direction orthogonal to the longitudinal direction of the CCD substrate within the plane of the CCD substrate at both ends of CCD in the longitudinal direction, and a third group of fastening member tot conduct the main-scanning adjustment by independently positioning the CCD substrate in a direction along the longitudinal direction of the CCD substrate within the plane of the CCD substrate.

摘要翻译： 公开了一种图像扫描单元，其具有：安装在块上的CCD基板; 三组调节紧固构件，用于将CCD基板在彼此正交的三维方向上定位; 以及弹性构件，用于将每个所述调节紧固构件按压到每个所述调节紧固构件的部分; 其中所述三组调节紧固件是第一组紧固件，用于通过在CCD纵向方向的两端垂直于CCD基板的平面方向独立地定位CCD基板来进行聚焦调节，第二组 一组紧固构件，通过在CCD基板的纵向方向的两端的CCD基板的平面内在与CCD基板的纵向正交的方向上独立地定位CCD基板，进行副扫描调整，第三组 通过在CCD基板的平面内沿着CCD基板的长度方向独立地定位CCD基板来进行主扫描调整。

公开(公告)号：US5408487A

公开(公告)日：1995-04-18

申请号：US214212

申请日：1994-03-17

申请人： Toru Uchida ,  Chikashi Anayama ,  Susumu Yamazaki ,  Hirohide Kurakake ,  Akito Kuramata ,  Haruhisa Soda

发明人： Toru Uchida ,  Chikashi Anayama ,  Susumu Yamazaki ,  Hirohide Kurakake ,  Akito Kuramata ,  Haruhisa Soda

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2201 ,  H01S5/323 ,  H01S5/34313 ,  H01S2302/00 ,  H01S5/0206 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3415 ,  H01S5/342 ,  H01S5/34306

摘要： A group III-V compound semiconductor laser of a 1 .mu.m band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 .mu.m band or a 1.55 .mu.m, and has a laser structure including an active layer For emitting light, guide layers sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5% or more and smaller than a2 by 0.5% or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.

摘要翻译： 具有优异的转换效率和高特征温度的1μm带的III-V族化合物半导体激光器。 半导体激光器可以发射1.3μm或1.55μm的光，并且具有包括有源层的激光结构为了发射光，夹持有源层并且具有比有源层大的带隙的引导层和包层 包围引导层并具有比引导层大的带隙的层。 引导层和包层的晶格常数比a1大0.5％以上且小于等于0.5％以上，其中a1表示GaAs的晶格常数，a2是InP的晶格常数。

公开(公告)号：US08446650B2

公开(公告)日：2013-05-21

申请号：US12772727

申请日：2010-05-03

申请人： Toru Uchida ,  Yasukazu Nagura ,  Atsushi Uematsu

发明人： Toru Uchida ,  Yasukazu Nagura ,  Atsushi Uematsu

IPC分类号： H04N1/04

CPC分类号： B65H5/062 ,  B65H2403/42 ,  B65H2403/946 ,  B65H2801/06 ,  Y10T74/19647 ,  Y10T74/2117

摘要： A document conveying device, include a conveyance roller which conveys a document that is attached to a conveyance roller shaft; and a flywheel connected to the conveyance roller shaft.

摘要翻译： 文件传送装置包括：输送辊，其输送安装在输送辊轴上的文件; 以及连接到输送辊轴的飞轮。

公开(公告)号：US07191944B2

公开(公告)日：2007-03-20

申请号：US11028696

申请日：2005-01-04

申请人： Katsuki Tamamura ,  Toru Uchida

发明人： Katsuki Tamamura ,  Toru Uchida

IPC分类号： G06K7/10

CPC分类号： H04N1/1026 ,  H04N1/1013 ,  H04N1/193 ,  H04N2201/0432

摘要： An image scanner apparatus is composed of a housing, an optical unit positioned in the housing, a drive mechanism driving the optical unit. The drive mechanism includes first and second wires connected to the optical unit, and a drive motor driving the first and second wires. One end of the first wire is connected to a first fixture, and one end of the second wire is connected to a second fixture. The first fixture is secured to a first wire-retaining member positioned outside the housing at a first securing position, and the first wire-retaining member retains the first fixture so that the first securing position is adjustable.

摘要翻译： 图像扫描仪装置由壳体，位于壳体内的光学单元，驱动光学单元的驱动机构构成。 驱动机构包括连接到光学单元的第一和第二线以及驱动第一和第二线的驱动马达。 第一线的一端连接到第一固定装置，第二线的一端连接到第二固定装置。 第一固定件固定在第一固定位置处定位在壳体外部的第一线固定构件上，并且第一线固定构件保持第一固定件，使得第一固定位置是可调节的。