公开(公告)号：US07875946B2

公开(公告)日：2011-01-25

申请号：US11259196

申请日：2005-10-27

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构 包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增 在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

公开(公告)号：US08772896B2

公开(公告)日：2014-07-08

申请号：US12926484

申请日：2010-11-22

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US07968868B2

公开(公告)日：2011-06-28

申请号：US12654016

申请日：2009-12-08

Applicant: Nami Yasuoka ,  Kenichi Kawaguchi

Inventor： Nami Yasuoka ,  Kenichi Kawaguchi

IPC: H01L31/00

CPC classification number: H01L31/18 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236

Abstract: A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.

Abstract translation: 在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。 在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层） 每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

公开(公告)号：US07663139B2

公开(公告)日：2010-02-16

申请号：US11444420

申请日：2006-06-01

Applicant: Nami Yasuoka ,  Kenichi Kawaguchi

Inventor： Nami Yasuoka ,  Kenichi Kawaguchi

IPC: H01L31/00

CPC classification number: H01L31/18 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236

Abstract: A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.

Abstract translation: 在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。 在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层） 每个上侧阻挡层（从第五层到底层的最上层的三层）形成为不具有应变的第二侧面阻挡层。

公开(公告)号：US07507600B2

公开(公告)日：2009-03-24

申请号：US11180689

申请日：2005-07-14

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Akito Kuramata

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Akito Kuramata

IPC: H01L21/00

CPC classification number: G02B6/132 ,  G02B6/1228 ,  G02B6/4204 ,  H01L31/02327

Abstract: A semiconductor photodetecting device including a PIN photodiode formed on an SI-InP substrate; a buried optical waveguide portion formed on the SI-InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI-InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.

Abstract translation: 一种半导体光电检测器件，包括形成在SI-InP衬底上的PIN光电二极管; 形成在SI-InP衬底上的掩埋光波导部分，其包括朝向PIN光电二极管连续增加的膜厚度和覆盖InGaAsP芯层的上表面和侧表面的InP覆盖层; 以及形成在PIN光电二极管和掩埋光波导部分之间的SI-InP衬底上并包括InGaAsP芯层和InP覆盖层的脊形连接光波导部分，其仅选择性地仅覆盖InGaAsP芯层的上表面。

公开(公告)号：US20050272180A1

公开(公告)日：2005-12-08

申请号：US11180689

申请日：2005-07-14

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Akito Kuramata

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Akito Kuramata

IPC: G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B6/42 ,  H01L21/00 ,  H01L31/0232 ,  H01L31/075 ,  H01L31/10

CPC classification number: G02B6/132 ,  G02B6/1228 ,  G02B6/4204 ,  H01L31/02327

Abstract: A semiconductor photodetecting device including a PIN photodiode formed on an SI—InP substrate; a buried optical waveguide portion formed on the SI—InP substrate and including the film thickness continuously increased toward the PIN photodiode and an InP clad layer covering the upper surface and the side surface of the InGaAsP core layer; and a ridge-shaped connection optical waveguide portion formed on the SI—InP substrate between the PIN photodiode and the buried optical waveguide portion and including the InGaAsP core layer and the InP clad layer selectively covering only the upper surface of the InGaAsP core layer.

公开(公告)号：US06498337B2

公开(公告)日：2002-12-24

申请号：US09818522

申请日：2001-03-28

Applicant: Nami Yasuoka

Inventor： Nami Yasuoka

IPC: H01L3100

CPC classification number: H01L31/105 ,  G02B6/1228 ,  G02B6/4203

Abstract: A photodetector includes a photodiode and an optical waveguide provided adjacent to the photodiode on a common substrate, wherein the optical waveguide includes a plurality of tapered optical waveguide layers separated by an intermediate layer having a uniform thickness, the thickness of the tapered optical waveguide layers increases from a first end surface away from the photodiode toward a second end surface adjacent to the photodiode.

Abstract translation: 光电检测器包括光电二极管和在公共基板上与光电二极管相邻设置的光波导，其中光波导包括由具有均匀厚度的中间层隔开的多个锥形光波导层，锥形光波导层的厚度增加 从远离光电二极管的第一端面朝向与光电二极管相邻的第二端面。

公开(公告)号：US20100090196A1

公开(公告)日：2010-04-15

申请号：US12654016

申请日：2009-12-08

Applicant: Nami Yasuoka ,  Kenichi Kawaguchi

Inventor： Nami Yasuoka ,  Kenichi Kawaguchi

IPC: H01L29/66

CPC classification number: H01L31/18 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/035236

Abstract: A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the undermost layer to the fourth layer from the bottom) is formed as a first side barrier layer into which a tensile strain is introduced, and each of the upper side barrier layers (three layers of the fifth Layer to the uppermost layer from the bottom) is formed as a second side barrier layer which has no strain.

Abstract translation: 在通过以7层或更多层直接层叠各量子点构成的柱状点之间设置有侧壁。 在构成侧壁的各个侧壁阻挡层中，形成作为施加拉伸应变的第一侧阻挡层，下侧阻挡层（从底部的最下层到第四层的四层） 每个上侧阻挡层（从第五层到底层的最上层三层）被形成为没有应变的第二侧阻挡层。

公开(公告)号：US20060273421A1

公开(公告)日：2006-12-07

申请号：US11259196

申请日：2005-10-27

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US20110068428A1

公开(公告)日：2011-03-24

申请号：US12926484

申请日：2010-11-22

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。