- 专利标题： Semiconductor device and method for manufacturing the same
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申请号： US11509730申请日： 2006-08-25
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公开(公告)号： US20060284270A1公开(公告)日： 2006-12-21
- 发明人: Sang Lee , Yil Kim , Jin Ahn
- 申请人： Sang Lee , Yil Kim , Jin Ahn
- 申请人地址： KR Gyeonggi-do 467-701
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do 467-701
- 优先权： KR10-2004-0102886 20041208
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.
公开/授权文献
- US07608868B2 Semiconductor device and method for manufacturing the same 公开/授权日：2009-10-27
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