发明申请
- 专利标题： Block contact architectures for nanoscale channel transistors
- 专利标题（中）： 用于纳米尺度通道晶体管的块式接触结构
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申请号： US11173866申请日： 2005-06-30
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公开(公告)号： US20070001219A1公开(公告)日： 2007-01-04
- 发明人: Marko Radosavljevic , Amlan Majumdar , Brian Doyle , Jack Kavalieros , Mark Doczy , Justin Brask , Uday Shah , Suman Datta , Robert Chau
- 申请人： Marko Radosavljevic , Amlan Majumdar , Brian Doyle , Jack Kavalieros , Mark Doczy , Justin Brask , Uday Shah , Suman Datta , Robert Chau
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.
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