发明申请
- 专利标题： Semiconductor device with effective heat-radiation
- 专利标题（中）： 具有有效散热的半导体器件
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申请号： US11520640申请日： 2006-09-14
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公开(公告)号： US20070007595A1公开(公告)日： 2007-01-11
- 发明人: Yuuichi Hirano , Shigenobu Maeda , Takuji Matsumoto , Takashi Ipposhi , Shigeto Maegawa
- 申请人： Yuuichi Hirano , Shigenobu Maeda , Takuji Matsumoto , Takashi Ipposhi , Shigeto Maegawa
- 申请人地址： JP TOKYO
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2003-146071 20030523
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
The semiconductor device has a silicon layer (SOI layer) (12) formed through a silicon oxide film (11) on a support substrate (10). A transistor (T1) is formed in the SOI layer (12). The wiring (17a) is connected with a source of the transistor (T1) through a contact plug (15a). A back metal (18) is formed on an under surface (back surface) of the support substrate (10) and said back metal (18) is connected with the wiring (17a) through a heat radiating plug (16). The contact plug (15a), the heat radiating plug (16) the wiring (17a) and the back metal (18) is made of a metal such as aluminum, tungsten and so on which has a higher thermal conductivity than that of the silicon oxide film (11) and the support substrate (10).
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