发明申请
US20070012993A1 Non-volatile memory device, non-volatile memory cell thereof and method of fabricating the same
有权
非易失性存储器件，其非易失性存储单元及其制造方法
- 专利标题： Non-volatile memory device, non-volatile memory cell thereof and method of fabricating the same
- 专利标题（中）： 非易失性存储器件，其非易失性存储单元及其制造方法
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申请号： US11179294申请日： 2005-07-12
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公开(公告)号： US20070012993A1公开(公告)日： 2007-01-18
- 发明人: Chao-Lun Yu , Chao-I Wu
- 申请人： Chao-Lun Yu , Chao-I Wu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
The present invention disclosed a non-volatile memory device and fabricating method thereof. The structure of non-volatile memory device at least comprises a substrate, several dielectric strips, several bit lines, a dielectrically stacking multi-layer, and several word lines. The substrate has several recesses. The dielectric strips are formed on the substrate, and each of the recess is interposed between two adjacent dielectric strips. The bit lines are respectively formed on the dielectric strips. The dielectrically stacking multi-layer comprising a charge-trapping layer is disposed on the bit lines and the recesses. The word lines are formed on the dielectrically stacking multi-layer and intersecting to the bit lines. When a voltage is applied to the bit lines, a plurality of inversion regions are respectively generated on the substrate.
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