发明申请
- 专利标题: Inductively coupled plasma processing apparatus
- 专利标题(中): 电感耦合等离子体处理装置
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申请号: US11489656申请日: 2006-07-18
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公开(公告)号: US20070017637A1公开(公告)日: 2007-01-25
- 发明人: Kyu Lee , Han Kim , Do Kim , Myoung Kim
- 申请人: Kyu Lee , Han Kim , Do Kim , Myoung Kim
- 优先权: KR10-2005-66024 20050720
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; C23C16/00
摘要:
An inductively coupled plasma processing apparatus is disclosed. The inductively coupled plasma processing apparatus includes a reaction chamber, a substrate holder for forming a plasma space in the reaction chamber and for supporting a processing substrate therein, a shield provided at the lateral side of the substrate holder, a plurality of openings formed below the substrate, and a linear antenna in the lower portion of the reaction chamber to which a high frequency power signal is applied. Thus, the inductively coupled plasma processing apparatus can uniformly distribute the density of the plasma so that a large-sized flat panel display can be implemented.
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