发明申请
US20070022953A1 Source gas-supplying unit and chemical vapor deposition apparatus having the same 审中-公开
源气体供给单元和具有该源气体供给单元的化学气相沉积设备

Source gas-supplying unit and chemical vapor deposition apparatus having the same
摘要:
A source gas-supplying unit may include a chamber for receiving a liquid source. A first pipe may extend into the chamber to dip into the liquid source. The first pipe may provide a carrier gas to bubble through the liquid source to generate a vapor source. A second pipe may be connected to the chamber. The vapor source and the carrier gas may be supplied by the second pipe to a process chamber in which a semiconductor-manufacturing process may be carried out. A blocking structure may be provided in the sealed chamber. The blocking structure may block the liquid source that may be splashed toward the second pipe due to the bubbling.
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