发明申请
US20070022953A1 Source gas-supplying unit and chemical vapor deposition apparatus having the same
审中-公开
源气体供给单元和具有该源气体供给单元的化学气相沉积设备
- 专利标题: Source gas-supplying unit and chemical vapor deposition apparatus having the same
- 专利标题(中): 源气体供给单元和具有该源气体供给单元的化学气相沉积设备
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申请号: US11490246申请日: 2006-07-21
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公开(公告)号: US20070022953A1公开(公告)日: 2007-02-01
- 发明人: Yun-Ho Choi , Tae-Hong Ha , Jung-Hun Seo , Jin-Gi Hong , Jung-Suk Seo , Sung-Guen Park , Hyun-Chul Kwun
- 申请人: Yun-Ho Choi , Tae-Hong Ha , Jung-Hun Seo , Jin-Gi Hong , Jung-Suk Seo , Sung-Guen Park , Hyun-Chul Kwun
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2005-0068296 20050727
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A source gas-supplying unit may include a chamber for receiving a liquid source. A first pipe may extend into the chamber to dip into the liquid source. The first pipe may provide a carrier gas to bubble through the liquid source to generate a vapor source. A second pipe may be connected to the chamber. The vapor source and the carrier gas may be supplied by the second pipe to a process chamber in which a semiconductor-manufacturing process may be carried out. A blocking structure may be provided in the sealed chamber. The blocking structure may block the liquid source that may be splashed toward the second pipe due to the bubbling.
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