Invention Application
US20070023916A1 Semiconductor structure with multiple bottom anti-reflective coating layer and method of forming photoresist pattern and pattern of semiconductor device using the same structure
审中-公开
具有多个底部抗反射涂层的半导体结构和使用相同结构形成半导体器件的光致抗蚀剂图案和图案的方法
- Patent Title: Semiconductor structure with multiple bottom anti-reflective coating layer and method of forming photoresist pattern and pattern of semiconductor device using the same structure
- Patent Title (中): 具有多个底部抗反射涂层的半导体结构和使用相同结构形成半导体器件的光致抗蚀剂图案和图案的方法
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Application No.: US11494469Application Date: 2006-07-28
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Publication No.: US20070023916A1Publication Date: 2007-02-01
- Inventor: Jung-hwan Hah , Yun-sook Chae , Han-ku Cho , Chang-jin Kang , Sang-gyun Woo , Man-hyoung Ryoo , Young-jae Jung
- Applicant: Jung-hwan Hah , Yun-sook Chae , Han-ku Cho , Chang-jin Kang , Sang-gyun Woo , Man-hyoung Ryoo , Young-jae Jung
- Priority: KR10-2005-0070028 20050730
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
The semiconductor structure includes an etch target layer to be pattemed, a multiple bottom anti-reflective coating (BARC) layer, and a photoresist (PR) pattern. The multiple BARC layer includes a first mask layer formed on the etch target layer and containing carbon, and a second mask layer formed on the first mask layer and containing silicon. A PR layer formed on the multiple BARC layer undergoes photolithography to form the PR pattern on the multiple BARC layer. The multiple BARC layer has a reflectance of 2% or less, and an interface angle between the PR pattern and the multiple BARC layer is 80° to 90°.
Information query
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