发明申请
US20070025145A1 NON-VOLATILE MEMORY CELL USING HIGH-K MATERIAL AND INTER-GATE PROGRAMMING
有权
使用高K材料和栅极编程的非易失性存储单元
- 专利标题： NON-VOLATILE MEMORY CELL USING HIGH-K MATERIAL AND INTER-GATE PROGRAMMING
- 专利标题（中）： 使用高K材料和栅极编程的非易失性存储单元
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申请号： US11470932申请日： 2006-09-07
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公开(公告)号： US20070025145A1公开(公告)日： 2007-02-01
- 发明人: Nima Mokhlesi , Jeffrey Lutze
- 申请人： Nima Mokhlesi , Jeffrey Lutze
- 申请人地址： US CA Milpitas 95035
- 专利权人： SanDisk Corporation
- 当前专利权人： SanDisk Corporation
- 当前专利权人地址： US CA Milpitas 95035
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A non-volatile memory device has a channel region between source/drain regions, a floating gate, a control gate, a first dielectric region between the channel region and the floating gate, and a second dielectric region between the floating gate and the control gate. The first dielectric region includes a high-K material. The non-volatile memory device is programmed and/or erased by transferring charge between the floating gate and the control gate via the second dielectric region.
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