发明申请
- 专利标题： Method for forming polycrystalline silicon thin film
- 专利标题（中）： 多晶硅薄膜的形成方法
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申请号： US11245208申请日： 2005-10-07
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公开(公告)号： US20070026647A1公开(公告)日： 2007-02-01
- 发明人: Chi-Ming Chang , Jung-Fang Chang , Hung-Tse Chen , Te-Chi Wong
- 申请人： Chi-Ming Chang , Jung-Fang Chang , Hung-Tse Chen , Te-Chi Wong
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 优先权： TW094125713 20050729
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
A method for forming a polycrystalline silicon thin film, comprising steps of: providing a substrate; forming an amorphous silicon thin film on the substrate; and inducing a plurality of eddy currents to heat up the substrate such that the amorphous silicon thin-film is annealed to form the polycrystalline silicon thin film.
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